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Vexillum-II
Contribuere ad viridi-vita et sustineri progressionem
Innovation, integritas, alacritate, dedication
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Vexillum-III
Igbt una fistula / modulus, sic diode / Mos, SGT Mos, Fossa-Mos, Super Junction Mos, Tres-Terminatio Voltage Regulator, FRD, SBD, Scr: etc.
Visum
T0-220c, 220f ad-220m, ad-3pn, ad-CCXLVII, ad-CCLI, T0-252, T0-263, Toll, DFN5 * VI, DFN3 * III, Sop-VIII, ad-XCII, etc.
Products
Pelagus packages
Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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Product authenticity

11

Profile Company

Jiangsu Donghai Semiconductor Co., Ltd. erat statutum in December MMIV, in No. LXXXVIII, Zhongtong Oriente Road, Shufang, Xinwu regio, Wuxi urbe, Jiangsu Province. Covers area 15000m2. Et Regular Registered caput est 81.5 decies Yuan. Habet annua productionem linea D decies potentia cogitationes. Sunt quatuor laboratories pro fabrica proprium test, reliability test, applicationem test et defectum analysis. Donghai est summus tech inceptum versantur in progressionem, consilio, packaging, testing et Sales de Semiconductor potentia cogitationes et integrated circuitus.

Comitatu Overview

Productum centrum

We offer Customer Comprehendo Product Solutio, comprehendo LV-Mosfet, HV Mosfet, igbt una / moduli, FRG / SBD, sic diode / Mos / Module, IPM et IPM.
Mosfet
Diode
Igbt
Module igbt
SIC
Voltage Regulator IC

Professio

Technology

Fortis 

Productio

Provectus 

Apparatu

Innovatio

Investigatio

Bonum post, Sales 

Ministerium

Calidum vendere semiconductor et integrated circuits

Provectus vestibulum technology, melius processus conditionibus, et subtiliter optimized fabrica structurae continuouse optimize productum conduction resistentia, switch characteres, reliability, et continue product iteration.
Featured Products
DISCIPIO
N-Channel Enhancement Modus Power Mosfet 180a 40v DHS020N04 ad-220C
N-Channel Enhancement Modus Power Mosfet 180a 40v DHS020N04 ad-220C

DISCIPIO

160a 30v N-Channel Enhancement Modus Power Mosfet DH020N03P 5x6-8
160a 30v N-Channel Enhancement Modus Power Mosfet DH020N03P 5x6-8

DISCIPIO

105a 68v N-Channel Enhancement Modus Power Mosfet Dhs055n07 ad-220c
105a 68v N-Channel Enhancement Modus Power Mosfet Dhs055n07 ad-220c

DISCIPIO

85a 80v N-Channel Enhancement Modus Power Mosfet DH075N08 ad-220C
85a 80v N-Channel Enhancement Modus Power Mosfet DH075N08 ad-220C

DISCIPIO

100A 70v N-Channel Enhancement Modus Power Mosfet Dhs043N07P Dfn5x6
100A 70v N-Channel Enhancement Modus Power Mosfet Dhs043N07P Dfn5x6

DISCIPIO

120a 60v N-Channel Enhancement Modus Power Mosfet DH065N06 ad-220C
120a 60v N-Channel Enhancement Modus Power Mosfet DH065N06 ad-220C

DISCIPIO

50A 650V trenchstop insulatas portam bipolar Transistor G50T65d ad-3pn
50A 650V trenchstop insulatas portam bipolar Transistor G50T65d ad-3pn

DISCIPIO

120a 85v N-Channel Enhancement Modus Power Mosfet Dhs045n85 ad-220c
120a 85v N-Channel Enhancement Modus Power Mosfet Dhs045n85 ad-220c

DISCIPIO

47a 100v N-Channel Enhancement Modus Power Mosfet ad-220C
47a 100v N-Channel Enhancement Modus Power Mosfet ad-220C

DISCIPIO

14A 650v N-Channel Enhancement Modus Power Mosfet F14N65 ad-220F
14A 650v N-Channel Enhancement Modus Power Mosfet F14N65 ad-220F

DISCIPIO

8A 650v N-Channel Enhancement Modus Power Mosfet F8N65 ad-220F
8A 650v N-Channel Enhancement Modus Power Mosfet F8N65 ad-220F

DISCIPIO

10A 600V Fast Recuperatio Diode Murd1060CT ad CCLII
10A 600V Fast Recuperatio Diode Murd1060CT ad CCLII

DISCIPIO

170a 40v N-Channel Enhancement Modus Power Mosfet DHS020N04P DFN5 * VI
170a 40v N-Channel Enhancement Modus Power Mosfet DHS020N04P DFN5 * VI

DISCIPIO

40a 40a 40a 40a 40a trenchstop portam transistulated G40N120D ad CCXLVII
40a 40a 40a 40a 40a trenchstop portam transistulated G40N120D ad CCXLVII

DISCIPIO

175a 80v N-Channel Enhancement Modus Power Mosfet Dhs035n88 ad-220c
175a 80v N-Channel Enhancement Modus Power Mosfet Dhs035n88 ad-220c

DISCIPIO

80a 40v N-Channel Enhancement Modus Power Mosfet DH045N04P DFN5X6 Package
80a 40v N-Channel Enhancement Modus Power Mosfet DH045N04P DFN5X6 Package

DISCIPIO

7.6a 650v N-Channel Super Junction Power Mosfet DHFSJ8N65 ad-220F
7.6a 650v N-Channel Super Junction Power Mosfet DHFSJ8N65 ad-220F

DISCIPIO

100A 40v N-Channel Enhancement Modus Power Mosfet Dhs021n04p Dfn5x6
100A 40v N-Channel Enhancement Modus Power Mosfet Dhs021n04p Dfn5x6

DISCIPIO

N-Channel Enhancement Modus Power Mosfet 80a 85V Dhs065n85 ad-220C
N-Channel Enhancement Modus Power Mosfet 80a 85V Dhs065n85 ad-220c

DISCIPIO

240a 85v N-Channel Enhancement Modus Power Mosfet Dhs020N88U Toll Package
240a 85v N-Channel Enhancement Modus Power Mosfet Dhs020N88U Toll Package

DISCIPIO

Semiconductor intelligens potentia Imperium Ratio Solutions

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News Center

Power semiconductor turba in china.png
Donghai Semiconductor fortis viridius futurum ad SNEC MMXXV cum provectus potentia Solutions

Et 18th SNEC International Photovoltaic Power generation et Dolor Energy Exhibitionem MMXXV concludi feliciter in June XIII, MMXXV, in National Pre se ferre et Convention Center in Shanghai. Sicut unum de maxime influential certe in global renovabili industria industria, hoc anno scriptor SNEC attracted milia industria professionales, industria duces, et innovative technology providers de circum orbem.

XIII Iunii MMXXV
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Quid enim igbt stand in electronics?

IGBT Technology Plantis Planta Partes in modern potentia electronics, enabling agentibus, summus potentia potestate trans amplis applications. Ex Industrial motor regitur ad Renewable Energy Systems, intellectus quod IGBT stat pro in electronics est clavis ad aedificationem reliable, summus perficientur solutions. Hic articulus explicat significatione igbt et explorat usus in cogitationes similis inverter ups, welding machinis, photovoltaic systems, et frequency converters. Ut youll 'quoque resolvere quam products sicut 650v igbt unum, 1200V igbt una, 50a 650v igbt unum, 75a 650v igbt unum, et 40a 1200V igbt unum fit in his applications.

X Iunii MMXXV
MCXCIX (II) .png
Quid est igbt in potentia moduli?

Intelligentes cur igbt adhibetur in potentia moduli est clavis ad Moderni potestate electronics. Igbt modules sunt fundamentalis components in hodiernae industriae, renewable navitas, et automotive systems. Illi activare efficient switching, altum voltage pertractatio, et reliable perficientur in diverse applications, inter welding machinarum, photovoltaic systems, inverter ups, frequency converters, et magis.

III Iunii MMXXV
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