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Hic es: Home » Products » IGBT MODULE » PIM » 400A 650V Media pars pontis moduli IGBTModule DGD400H65M2T EconoDUAL3 PACKAGE

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400A 650V Media pars pontis moduli IGBTModule DGD400H65M2T EconoDUAL3 PACKAGE

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit VCEsat et celeritate mutandi , portae humilis crimen. Quod congruit cum RoHS vexillum.
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400A 650V Medium pontis moduli

1 Description 

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit VCEsat et celeritate mutandi , portae humilis crimen. Quod congruit cum RoHS vexillum.


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

● Saturatio humilis intentione: VCE(sat), typ = 1.45V @ IC = 400A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS


III Applications 

  •  Welding 

  •  UPS 

  •  Tres gradu Inverter 

  • AC et DC servo amplio coegi



  • Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
    DGD400H65M2T 650V 400A (Tj=100℃) 1.45V (Type) 175 EconoDUAL3
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