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Hic es: Home » Products » IGBT » 600V-650V » 50A 650V Trenchstop Insulae portae Bipolar Transistor DGC50F65M2 TO-247

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50A 650V Trenchstop Insulae Bipolar Transistor DGC50F65M2 TO-247

Utens DongHai fossam proprietatis designans et technologiam FS promovens, 650V FS IGBT offert superiora et mutandi spectacula, alta NIVIS asperitas faciles parallelas operationes
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50A 650V Trenchstop Insulae Bipolar Transistor


I Features 

Utens DongHai fossam proprietariam designat et FS technologiam promovet, 650V FS IGBT actiones meliores et commutationes praebet, altae NIVIS asperitas facilem operationem parallelam. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 1.8V @ IC = 50A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS 


III Applications 

Welding 

UPS 

Tres-gradu Inverter


VCE Vcesat,Tj=25℃ Ic Tjmax sarcina
650V 1.8V 50A  175 TO-247


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