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Hic es: Home » Products » IGBT » 1200V-170V » 40A 1200V Trenchstop Insulae portae Bipolar Transistor DGC40H120M2 TO-247

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40A 1200V Trenchstop Insulae Bipolar Transistor DGC40H120M2 TO-247

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit Vcesat egregium et celeritate mutandi, portae humilis praefectus. Quod congruit cum RoHS vexillum.
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40A 1200V Trenchstop Insulae Porta Bipolar Transistor


I Features 

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit Vcesat egregium et celeritate mutandi, portae humilis praefectus. Quod congruit cum RoHS vexillum. 


2 Features 

Minimum Vcesat

Maximum crimen porta

Optima celeritate mutandi 

● Facilis parallingis capacitas ob temperaturam positivam coefficientis in Vcesat 

Tsc≥6µs 

Fast recuperatio plena vena anti-parallel diode 


III Applications 

Welding

UPS 

Tres-gradu Inverter

Vces sarcina Ic(Tj=100℃)
1200V TO-247-3L 40A 


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