 |
| Quantity: | |
|---|---|
DGC40H120M2
WXDH
TO-247
1200V
40A
40A 1200V Trenchstop Insulated Gate Bipolar Transistor
1 Features
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● Low Vcesat
● Low gate charge
● Excellent switching speed
● Easy paralleling capability due to positive temperature Coefficient in Vcesat
● Tsc≥6µs
● Fast recovery full current anti-parallel diode
3 Applications
● Welding
● UPS
● Three-leve Inverter
| Vces | Package | Ic(Tj=100℃) |
| 1200V | TO-247-3L | 40A |
40A 1200V Trenchstop Insulated Gate Bipolar Transistor
1 Features
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● Low Vcesat
● Low gate charge
● Excellent switching speed
● Easy paralleling capability due to positive temperature Coefficient in Vcesat
● Tsc≥6µs
● Fast recovery full current anti-parallel diode
3 Applications
● Welding
● UPS
● Three-leve Inverter
| Vces | Package | Ic(Tj=100℃) |
| 1200V | TO-247-3L | 40A |
