Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » IGBT » 1200V-1700V » 40A 1200V Trenchstop Insulated Gate Bipolar Transistor DGC40H120M2 TO-247

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40A 1200V Trenchstop Insulated Gate Bipolar Transistor DGC40H120M2 TO-247

40A 1200V Trenchstop Insulated Gate Bipolar Transistor
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Quantity:
  • DGC40H120M2

  • WXDH

40A 1200V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low Vcesat

● Low gate charge

● Excellent switching speed 

● Easy paralleling capability due to positive temperature Coefficient in Vcesat 

● Tsc≥6µs 

● Fast recovery full current anti-parallel diode 


3 Applications 

● Welding

● UPS 

● Three-leve Inverter

VcesPackageIc(Tj=100℃)
1200VTO-247-3L40A 


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