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Hic es: Home » Products » IGBT MODULE » PIM » 450A 1200V Media pars pontis moduli IGBTModule DGD450H120L2T EconoDUAL3 PACKAGE

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450A 1200V Medium pontis moduli IGBTModule DGD450H120L2T EconoDUAL3 PACKAGE

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.
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450A 1200V Medium pontis moduli

1 Description 

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 1.75V @ IC = 450A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS

III Applications 

  •  Welding 

  •  UPS 

  •  Tres gradu Inverter 

  • AC et DC servo amplio coegi



  • Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
    DGD450H120L2T 1200V 450A (Tj=100℃) 1.75V (Type) 175 EconoDUAL3
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