50A 1200V Trenchstop Insulae Bipolar Transistor
1 Description
Hae portae Insulae Bipolar Transistor provectae fossae et Fieldstop consilio technologiae usi, providit egregius
Vcesat et mutandi velocitate, porta suscipit ac. Quod congruit cum RoHS vexillum.
2 Features
Minimum Vcesat
Low porta crimen
Optima celeritate mutandi
● Facilis parallingis capacitas ob temperaturam positivam coefficientis in Vcesat
Tsc≥10μs
Fast recuperatio plena vena anti-parallel diode
III Applications
Welding
UPS
Tres-gradu Inverter
| Type |
VCE |
Ic |
Vcesat,Tj=25℃ |
Tjmax |
sarcina |
| G50N120D |
1200V |
50A |
1.9V |
150℃ |
TO-264 |