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G50N120D

50A 1200V Trenchstop Insulae Portae Bipolar Transistor
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50A 1200V Trenchstop Insulae Bipolar Transistor

1 Description

Hae portae Insulae Bipolar Transistor provectae fossae et Fieldstop consilio technologiae usi, providit egregius

Vcesat et mutandi velocitate, porta suscipit ac. Quod congruit cum RoHS vexillum.

2 Features

Minimum Vcesat

Low porta crimen

Optima celeritate mutandi

● Facilis parallingis capacitas ob temperaturam positivam coefficientis in Vcesat

Tsc≥10μs

Fast recuperatio plena vena anti-parallel diode

III Applications

Welding

UPS

Tres-gradu Inverter

Type VCE Ic Vcesat,Tj=25℃ Tjmax sarcina
G50N120D 1200V 50A 1.9V 150℃ TO-264


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