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50A 1200V Trenchstop Insulated Gate Bipolar Transistor
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent
Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● Low Vcesat
● Low gate charge
● Excellent switching speed
● Easy paralleling capability due to positive temperature Coefficient in Vcesat
● Tsc≥10μs
● Fast recovery full current anti-parallel diode
3 Applications
● Welding
● UPS
● Three-leve Inverter
| Type | VCE | Ic | Vcesat,Tj=25℃ | Tjmax | Package |
| G50N120D | 1200V | 50A | 1.9V | 150℃ | TO-264 |
50A 1200V Trenchstop Insulated Gate Bipolar Transistor
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent
Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● Low Vcesat
● Low gate charge
● Excellent switching speed
● Easy paralleling capability due to positive temperature Coefficient in Vcesat
● Tsc≥10μs
● Fast recovery full current anti-parallel diode
3 Applications
● Welding
● UPS
● Three-leve Inverter
| Type | VCE | Ic | Vcesat,Tj=25℃ | Tjmax | Package |
| G50N120D | 1200V | 50A | 1.9V | 150℃ | TO-264 |
