Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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G50N120D

50A 1200V Trenchstop Insulated Gate Bipolar Transistor
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50A 1200V Trenchstop Insulated Gate Bipolar Transistor

1 Description

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent

Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard.

2 Features

● Low Vcesat

● Low gate charge

● Excellent switching speed

● Easy paralleling capability due to positive temperature Coefficient in Vcesat

● Tsc≥10μs

● Fast recovery full current anti-parallel diode

3 Applications

● Welding

● UPS

● Three-leve Inverter

TypeVCEIcVcesat,Tj=25℃TjmaxPackage
G50N120D1200V50A1.9V150℃TO-264


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