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50A 650V trenchstop insulatas portam bipolar Transistor G50T65LBBW ad-CCXLVII

Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt praebet superior et switching facienda, princeps NIVIS Avalanche Ruggedenfy Securus Parallela Operatio
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50A 650V trenchstop insulatas portam bipolar Transistor


I features 

Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v fs igbt offert superior et switching operas, princeps NIVIS Avalanche Ruggedenfo 


II features

● fs fossam technology, positivum temperatus coefficiens

● humilis saturation intentione: VCE (Sat), Typ = 1.8v @ IC = 50A et TJ = XXV ° 

● maxime amplificata avalanche facultatem 


III Applications 

● Welding

● UPS 

● tres-gradu inverter

Vces Sarcina IC (TJ = C ℃)
650v Ad CCXLVII 50A 


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