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75a 1200V trenchstop insulatas portam bipolar Transistor dgc75f120m2 ad 247plus

Using Donghai proprietary fossa consilio et progressus fs technology, 1200V fs igbt praebet superior et switching operam, altum NIVIS Avalanche Ruggedness Securus Parallela Operatio
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75a 1200V trenchstop insulatas portam bipolar Transistor


I features 

Usura Donghai proprietary fossa consilio et progressus fs technology, 1200V fs igbt praebet superior et switching operam, princeps NIVIS Avalanche Ruggedeness Securus Parallel Operatio 


II features

● fs fossam technology, positivum temperatus coefficiens 

● humilis saturation intentione: VCE (Sat), Typ = 2.1V @ IC = 75a et TJ = XXV ° C 

● maxime amplificata avalanche facultatem 


III Applications 

● Welding 

● UPS 

● tres-gradu inverter

Vces Sarcina IC (TJ = C ℃)
1200V Ad 247plus 75a 


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