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Jiangsu Donghai Semiconductor Co., Ltd
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75A 1200V Trenchstop Insulated Gate Bipolar Transistor DGC75F120M2 TO-247PLUS

Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
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75A 1200V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and  switching performances, high avalanche ruggedness easy  parallel operation 


2 Features

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 2.1V @ IC =75A and Tj = 25°C 

● Extremely enhanced avalanche capability 


3 Applications 

● Welding 

● UPS 

● Three-level Inverter

Vces Package Ic(Tj=100℃)
1200V TO-247PLUS 75A 


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