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4a 650v N-Channel Enhancement Modus Power Mosfet D4N65 ad-252b

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
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4a 650v N-Channel Enhancement Modus Power Mosfet


I Description

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. Ad-220f providet Voltage rated at 2000v RMS ab omnibus tribus terminalibus ad externum heatsink. Ad-220f seriem propinquos meos in ulna (File Ref: E252906). 


II features

● Fast Switching 

● ESD improved facultatem 

● humilis in resistentia (rdson≤2.8Ω)

● Minimum porta (Typ, 14.5nc) 

● Low Reverse Transfer Capitances (Typ: 3.5pf) 

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test 


III Applications 

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUPTURA electron SADIO et nibh.


Vdss  RDS (on) (Typ) Id 
650v 2.4Ω 4a



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