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G20T65D

20A 650V Portae Bipolar Transistor Insulae
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20A 650V Portae Bipolar Transistor insulatae

General Description

Trench consilio usus DongHai et technologiae FS provectae, 650V FS IGBT meliorem conductionem et commutationes spectaculas praebet, altam asperitatem NIVIS et operationem facilem parallelam.

Features:

FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 1.9V @ IC = 20A et TC = 25°C

valde auctus facultatem NIVIS CASUS

Applications

Motor ControlPFC、UPS…

Type

Vce Ic Vcesat,Tj=25℃ Ptot TC=25℃) sarcina
G20T65D 650V 20A 1.9V 96W TO-220F


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