G20t65d

20A 650V insulatas portam bipolar Transistor

General Description:

Using Donghai proprietary fossa consilio et provectus fs technology, 650v fs igbt praebet superior conduction et switching operas, princeps NIVIS Avalanche Ruggedeness et Securus parallel operationem.

Features:

 fs fossam technology, positivum temperatus coefficiens

 Minimum Saturation intentione: VCE (Sat), Typ = 1.9V @ IC = 20A et TC = XXV °

 maxime amplificata avalanche facultatem

Applications:

Motricium Imperium, PFC, UPS ...