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20A 650V insulatas portam bipolar Transistor
General Description:
Using Donghai proprietary fossa consilio et provectus fs technology, 650v fs igbt praebet superior conduction et switching operas, princeps NIVIS Avalanche Ruggedeness et Securus parallel operationem.
Features:
fs fossam technology, positivum temperatus coefficiens
Minimum Saturation intentione: VCE (Sat), Typ = 1.9V @ IC = 20A et TC = XXV °
maxime amplificata avalanche facultatem
Applications:
Motricium Imperium, PFC, UPS ...
Genus | VCE | IC | Vcsat, TJ = XXV ℃ | Ptot TC = XXV ℃) | Sarcina |
G20t65d | 650v | 20A | 1.9v | 96W | Ad-220f |
20A 650V insulatas portam bipolar Transistor
General Description:
Using Donghai proprietary fossa consilio et provectus fs technology, 650v fs igbt praebet superior conduction et switching operas, princeps NIVIS Avalanche Ruggedeness et Securus parallel operationem.
Features:
fs fossam technology, positivum temperatus coefficiens
Minimum Saturation intentione: VCE (Sat), Typ = 1.9V @ IC = 20A et TC = XXV °
maxime amplificata avalanche facultatem
Applications:
Motricium Imperium, PFC, UPS ...
Genus | VCE | IC | Vcsat, TJ = XXV ℃ | Ptot TC = XXV ℃) | Sarcina |
G20t65d | 650v | 20A | 1.9v | 96W | Ad-220f |