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20A 650V Insulated Gate Bipolar Transistor
General Description：
Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features：
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.9V @ IC =20A and TC = 25°C
Extremely enhanced avalanche capability
Applications：
Motor Control、PFC、UPS…
Type | Vce | Ic | Vcesat,Tj=25℃ | Ptot TC=25℃） | Package |
| G20T65D | 650V | 20A | 1.9V | 96W | TO-220F |
20A 650V Insulated Gate Bipolar Transistor
General Description：
Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features：
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.9V @ IC =20A and TC = 25°C
Extremely enhanced avalanche capability
Applications：
Motor Control、PFC、UPS…
Type | Vce | Ic | Vcesat,Tj=25℃ | Ptot TC=25℃） | Package |
| G20T65D | 650V | 20A | 1.9V | 96W | TO-220F |
