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DGC75C120M2T

IGBT OMNIBUS 75A 1200V 6 in uno sarcina
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75A 1200V 6 in uno sarcina

1 Description

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.

2 Features

FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 2.0V @ IC = 75A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

III Applications

Welding

UPS

Tres-gradu Inverter

AC et DC servo coegi amplifier


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