未命名 (I) (VIII) (I)
porta
Jiangsu Donghai Semiconductor Co., Ltd
You are here: In domo » Productus » Mosfet » -30v ~ -100v p MOS » -100V / 33MΩ / -35a P, Mosfet DH100P30D ad-252b

loading

Share est:
Facebook Sharing Button
Twitter Socius Button
Line sharing button
Weckat Sharing Button
LinkedIn Sharing Button
Pinterest Sharing Button
Whatsapp Sharing Button
Sharing Sharing Button

-100V / 33MΩ / -35a P, Mosfet DH100P30D ad-252b

His P-Channel Enhancement Modus Power Mosfets Used Advanced Valley Technology Design, providit optimum RDSon et humilis porta arguere. Quae secundum Radii vexillum.
Availability:
Quantitas:
Inquiro Addere ad cartallum

-100V / 33MΩ / -35a P, Mosfet


I Description

His P-Channel Enhancement Modus Power Mosfets Used Advanced Valley Technology Design, providit optimum RDSon et humilis porta arguere. Quae secundum Radii vexillum. 


II features 

• humilis in resistentia

• humilis vicissim translationem capientances 

• C% una pulsus Copyops NIVIS CASUS Energy Test 

• C% Δvds test 

• PB-libera plating / halogen-liberum / Rohs obsequium 


Applications 

• onus switch


Vdss RDS (on) (Typ) Id 
-100v 33Mω -35a



Download DH100p30AD specification.pdf

Previous: 
Next: 
Mosfet
  • Jiangsu Donghai Semiconductor Co., Ltd
  • NEWSLETTER USUS
  • Signare ad Future
    Sign nostro Newsletter ad updates recta ad Inbuxo
    Submitto
Copyright © 2023Jiangsu Donghai Semiconductor Co., Ltd Technology a leadong.com