25A 650V trenchstop insulatas portam bipolar Transistor
I Description
Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v Higbt praebet superior
Switching operas, princeps NIVIS Avalanche Ruggedeness Securus Operatio
II features
● fs fossam technology, positivum temperatus
coefficient
● humilis saturation intentione: VCE (Sat), Typ = 1.85v
@ IC = 25A et TJ = XXV ° C
● maxime amplificata avalanche facultatem
III Applications
● Welding
● UPS
● tres-gradu inverter
Genus |
VCE |
IC |
Vcsat, TJ = XXV ℃ |
Tjmax |
Sarcina |
Dgf25f65m |
650v |
25A |
1.85v |
CLXXV ℃ |
Ad-220f |