porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » IGBT » 600V-650V » DGF25F65M

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

DGF25F65M

25A 650V Trenchstop Insulae Portae Bipolar Transistor
Availability:
Quantity:

25A 650V Trenchstop Insulae Bipolar Transistor

1 Description

Utens DongHai fossam proprietariam designet ac FS technologiam promovet, 650V FS IGBT superior et superior offert.

mutandi spectacula alta NIVIS asperitas faciles operationes parallelae

2 Features

FS Trench Technology, Positiva temperatus

coefficiens

● Minimum satietatem voltage: VCE(sat), typ = 1.85V

@ IC = 25A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

III Applications

Welding

UPS

Tres-gradu Inverter


Type

Vce Ic Vcesat,Tj=25℃ Tjmax sarcina
DGF25F65M 650V 25A 1.85V 175 TO-220F


Priora: 
Next: 
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua