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Dgf25f65m

25A 650V trenchstop insulatas portam bipolar Transistor
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25A 650V trenchstop insulatas portam bipolar Transistor

I Description

Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v Higbt praebet superior

Switching operas, princeps NIVIS Avalanche Ruggedeness Securus Operatio

II features

● fs fossam technology, positivum temperatus

coefficient

● humilis saturation intentione: VCE (Sat), Typ = 1.85v

@ IC = 25A et TJ = XXV ° C

● maxime amplificata avalanche facultatem

III Applications

● Welding

● UPS

● tres-gradu inverter


Genus

VCE IC Vcsat, TJ = XXV ℃ Tjmax Sarcina
Dgf25f65m 650v 25A 1.85v CLXXV ℃ Ad-220f


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