(1)(8) (1)
porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » IGBT MODULE » PIM » 160A 650V Media pars pontis moduli IGBTModule DGA160H65M2T 34mm

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

160A 650V Dimidium pontis moduli IGBTModule DGA160H65M2T 34mm

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.
Availability:
Quantity:
inquire Add to Basket

  • DGA160H65M2T

  • WXDH

  • 34mm

  • DGA160H65M2T.pdf

  • 650V

  • 160A

160A 650V Medium pontis moduli


 1 Description 

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

● Saturatio humilis intentione: VCE(sat), typ = 1.8V @ IC = 160A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS 


III Applications 

Welding 

UPS 

Tres-gradu Inverter 

AC et DC servo coegi amplifier


Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
DGA160H65M2T 650V 160A (Tj=100℃) 1.8V (Type) 175 34MM


Priora: 
Next: 
IGBT OMNIBUS
  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua
    Submit
Copyright © 2023Jiangsu Donghai Semiconductor Co., Ltd Technology by leadong.com