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160A 650V Half bridge module IGBTModule DGA160H65M2T 34mm

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
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  • DGA160H65M2T

  • WXDH

  • 34mm

  • DGA160H65M2T.pdf

  • 650V

  • 160A

160A 650V Half bridge module


 1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =160A and Tj = 25°C 

● Extremely enhanced avalanche capability 


3 Applications 

 Welding 

 UPS 

 Three-leve Inverter 

 AC and DC servo drive amplifier


Type VCE Ic VCEsat,Tj=25℃ Tjop Package
DGA160H65M2T 650V 160A (Tj=100℃) 1.8V (Typ) 175℃ 34MM


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