160A 650V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =160A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
Type |
VCE |
Ic |
VCEsat,Tj=25℃ |
Tjop |
Package |
DGA160H65M2T |
650V |
160A (Tj=100℃) |
1.8V (Typ) |
175℃ |
34MM |