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Hic es: Home » Products » IGBT MODULE » PIM » 600A 650V Media pars pontis moduli IGBTModule DGD600H65M2T EconoDUAL3 PACKAGE

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600A 650V Media pars pontis moduli IGBTModule DGD600H65M2T EconoDUAL3 PACKAGE

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.
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600A 650V Medium pontis moduli

1 Description 

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 1.48V @ IC = 600A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS


III Applications 

  •  Welding 

  •  UPS 

  •  Tres gradu Inverter 

  • AC et DC servo amplio coegi



  • Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
    DGD600H65M2T 650V 600A (Tj=100℃) 1.48V (Type) 175 EconoDUAL3
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