porta
Jiangsu Donghai Semiconductor Co., Ltd
You are here: In domo » Productus » Module igbt » Pim » 650V 650v dimidium pontem module igbtmodule dgd600h65m2toncodual3 sarcina

loading

Share est:
Facebook Sharing Button
Twitter Socius Button
Line sharing button
Weckat Sharing Button
LinkedIn Sharing Button
Pinterest Sharing Button
Whatsapp Sharing Button
Sharing Sharing Button

600a 650v dimidium pontem moduli igbtmodule dgd600h65m2tononodual3 sarcina

Haec insulatas portam bipolar Transistor solebat provectus fibulas FieldStop technology consilium providit optimum vcsat et switching celeritate, humilis porta arguere. Quae secundum Radii vexillum.
Availability:
Quantitas:

600A 650V dimidium pontem moduli

I Description 

Haec insulatas portam bipolar Transistor solebat provectus fibulas FieldStop technology consilium providit optimum vcsat et switching celeritate, humilis porta arguere. Quae secundum Radii vexillum.


II features 

● fs fossam technology, positivum temperatus coefficiens 

● humilis saturation intentione: VCE (Sat), Typ = 1.48V @ IC = 600A et TJ = XXV ° 

● maxime amplificata avalanche facultatem


III Applications 

  •  LIBELLUS 

  •  Ups 

  •  Tres-Leve inverter 

  • AC et DC servo coegi Amplifier



  • Genus VCE IC Vcsat, TJ = XXV ℃ Tjop Sarcina
    Dgd600h65m2t 650v 600a (TJ = C ℃) 1.48v (Typ) CLXXV ℃ Econodual3
Previous: 
Next: 
  • NEWSLETTER USUS
  • Signare ad Future
    Sign nostro Newsletter ad updates recta ad Inbuxo