Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DJG660N80E TO-220C

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the RoHS standard.
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  • DJG660N80E

  • WXDH

8A 800V N-channel Super Junction Power MOSFET


1 Description

These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the RoHS standard. 


2 Features 

● Very Low FOM (RDS(on) X Qg ) 

● Low on resistance

● Low gate charge 

● Low reverse transfer capacitances 

● Built-in ESD Diode 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test


3 Applications

● Power factor correction(PFC). 

● Switched mode power supplies(SMPS). 

● Uninterruptible power supply(UPS). 

● AC to DC Converters 

● Telecom


VDSS  RDS(on)(TYP) ID 
800V 0.58Ω 8A



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