 |
| Quantity: | |
|---|---|
E13N50
WXDH
E13N50
TO-263
500V
13A
N-channel Enhancement Mode Power MOSFET 13A 500V
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤0.45Ω)
● Low gate charge(Typ: 40nC)
● Low reverse transfer capacitances(Typ: 11pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)（TYP) | ID |
| 500V | 0.35Ω | 13A |
N-channel Enhancement Mode Power MOSFET 13A 500V
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤0.45Ω)
● Low gate charge(Typ: 40nC)
● Low reverse transfer capacitances(Typ: 11pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)（TYP) | ID |
| 500V | 0.35Ω | 13A |
