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E13n50
Wxdh
E13n50
Ad-CCLXIII
500V
13a
N-Channel Enhancement Modus Power Mosfet 13A 500V
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis super resistentia (rdson≤0.45Ω)
● Minimum porta (Typ, 40nc)
● Humilis Reverse Transfer Capitances (Typ: 11PF)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
500V | 0,35Ω | 13a |
N-Channel Enhancement Modus Power Mosfet 13A 500V
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis super resistentia (rdson≤0.45Ω)
● Minimum porta (Typ, 40nc)
● Humilis Reverse Transfer Capitances (Typ: 11PF)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
500V | 0,35Ω | 13a |