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D4N70
WXDH
D4N70
TO-252B
700V
4A
N-channel Enhancement Mode Power MOSFET 4A 700V
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤3.1Ω)
● Low gate charge(Typ: 12.7nC)
● Low reverse transfer capacitances(Typ: 2.7pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
700V | 2.55Ω | 4.0A |
N-channel Enhancement Mode Power MOSFET 4A 700V
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤3.1Ω)
● Low gate charge(Typ: 12.7nC)
● Low reverse transfer capacitances(Typ: 2.7pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
700V | 2.55Ω | 4.0A |