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D4n70
Wxdh
D4n70
Ad-252b
700V
4a
N-Channel Enhancement Modus Power Mosfet 4a 700V
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis super resistentia (rdson≤3.1Ω)
● Minimum porta (Typ: 12.7nc)
● Minimum Reverse Transfer Capitancia (Typ: 2.7pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
700V | 2.55Ω | 4.0a |
N-Channel Enhancement Modus Power Mosfet 4a 700V
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis super resistentia (rdson≤3.1Ω)
● Minimum porta (Typ: 12.7nc)
● Minimum Reverse Transfer Capitancia (Typ: 2.7pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
700V | 2.55Ω | 4.0a |