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6A 900V N-channel Enhancement Mode Power MOSFET F6N90 TO-220F

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the RoHS standard.
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6A 900V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906). 


2 Features 

● Fast switching 

● ESD improved capability 

● Low on resistance(Rdson≤2.3Ω) 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Used in various power switching circuit for system miniaturization and higher efficiency. 

● Power switch circuit of electron ballast and adaptor.


VDSS  RDS(on)（TYP) ID 
900V 1.8Ω 6A



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