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D2N60
WXDH
TO-252B
600V
2A
2A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS
2.Standard.
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤4.5Ω)
● Low gate charge(Typ: 9.5nC)
● Low reverse transfer capacitances(Typ: 3pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
600V | 3.6Ω | 2A |
2A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS
2.Standard.
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤4.5Ω)
● Low gate charge(Typ: 9.5nC)
● Low reverse transfer capacitances(Typ: 3pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
600V | 3.6Ω | 2A |