2A 600V N-channel Enhancement Mode Power MOSFET D2N60 TO-252B

2A 600V N-channel Enhancement Mode Power MOSFET

1 Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS 

2.Standard. 

● Fast switching 

● ESD improved capability 

● Low on resistance(Rdson≤4.5Ω) 

● Low gate charge(Typ: 9.5nC) 

● Low reverse transfer capacitances(Typ: 3pF) 

● 100% single pulse avalanche energy test

● 100% ΔVDS test

3 Applications

● Used in various power switching circuit for system miniaturization and higher efficiency. 

● Power switch circuit of electron ballast and adaptor.