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D2n60
Wxdh
Ad-252b
600V
2a
2a 600v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Rohs
2.Sstandard.
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤4.5Ω)
● Minimum porta (Typ, 9.5nc)
● Humilis Reverse Transfer Capitances (Typ, 3pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
600V | 3.6Ω | 2a |
2a 600v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Rohs
2.Sstandard.
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤4.5ω)
● Minimum porta (Typ, 9.5nc)
● Humilis Reverse Transfer Capitances (Typ, 3pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
600V | 3.6Ω | 2a |