Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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14A 650V N-channel Enhancement Mode Power MOSFET F14N65 TO-220F

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
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  • F14N65

  • WXDH

14A 650V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906). 


2 Features 

● Fast switching 

● ESD improved capability 

● Low on resistance(Rdson≤0.7Ω) 

● Low gate charge(Typ: 32nC) 

● Low reverse transfer capacitances(Typ: 7.0pF)

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Used in various power switching circuit for system miniaturization and higher efficiency. 

● Power switch circuit of electron ballast and adaptor.

VDSS  RDS(on)(TYP) ID 
650V 0.6 Ω 14A



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