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7N65/F7N65/I7N65/E7N65/B7N65/D7N65
WXDH
7A 650V N-canale Enhancement Modus Power MOSFET
1 Description
Haec N-canali Consectetur VDMOSFETs, technologiae planae auto-aligned, quae damnum conductionis minuit, emendare mutandi effectum et augere NIVIS industriam.Quod congruit cum RoHS vexillum.
2 Features
Fast Switching
ESD Improved Capability
Minimum DE Resistentia (Rdson≤1.45Ω)
Porta Low præcipe (Typ: 24nC)
Low Reverse Transfer Capacitances (Typ: 5.5pF)
C% Singulus Pulsus NIVIS Energy Test
C% VDS Test
III Applications
● in variis potentiae mutandi circuitionibus ad systematis miniaturizationem et efficientiam altiorem adhibita.
● Potestas transiens ambitum electronico adprehensis et adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 1.25Ω | 7A |
7A 650V N-canale Enhancement Modus Power MOSFET
1 Description
Haec N-canali Consectetur VDMOSFETs, technologiae planae auto-aligned, quae damnum conductionis minuit, emendare mutandi effectum et augere NIVIS industriam.Quod congruit cum RoHS vexillum.
2 Features
Fast Switching
ESD Improved Capability
Minimum DE Resistentia (Rdson≤1.45Ω)
Porta Low præcipe (Typ: 24nC)
Low Reverse Transfer Capacitances (Typ: 5.5pF)
C% Singulus Pulsus NIVIS Energy Test
C% VDS Test
III Applications
● in variis potentiae mutandi circuitionibus ad systematis miniaturizationem et efficientiam altiorem adhibita.
● Potestas transiens ambitum electronico adprehensis et adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 1.25Ω | 7A |
