Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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G40T65LBBN TO-3PN

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
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  • G40T65LBBN

  • WXDH

40A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Description 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.85V @ IC =40A and Tj = 25°C

● Extremely enhanced avalanche capability


3 Applications 

● Welding 

● UPS 

● Three-level Inverter


VDSSVcesat,Tj=25℃ID
650V1.8V40A


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