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DGE20F65M2
WXDH
20A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior switching performances, high avalanche ruggedness and easy parallel operation
2 Features
● FS Trench Technology, positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =20A and Tj =25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| VCE | Vcesat,Tj=25℃ | Ic | Tjmax | Package |
| 650V | 1.8V | 20A | 175℃ | TO-263-3L |
20A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior switching performances, high avalanche ruggedness and easy parallel operation
2 Features
● FS Trench Technology, positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =20A and Tj =25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| VCE | Vcesat,Tj=25℃ | Ic | Tjmax | Package |
| 650V | 1.8V | 20A | 175℃ | TO-263-3L |
