Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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IGBT Diode DGCP160H65L2 TO-247

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
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  • DGCP160H65L2

  • WXDH

160A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =160A and Tj =25°C 

● Extremely enhanced avalanche capability 


3 Applications 

● Welding 

● UPS 

● Three-level Inverter

VCEVcesat,Tj=25℃IcTjmaxPackage
650V1.8V160A 175℃TO-247


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