IGBT Diode DGCP160H65L2 TO-247

160A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 

2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =160A and Tj =25°C 

● Extremely enhanced avalanche capability 

3 Applications 

● Welding 

● UPS 

● Three-level Inverter