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20A 650V Trenchstop Insulated Gate Bipolar Transistor DGE20F65M2 TO-263

Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior switching performances, high avalanche ruggedness and easy parallel operation
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20A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior switching performances, high avalanche ruggedness and easy parallel operation


2 Features

 ● FS Trench Technology, positive temperature coefficient

 ● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =20A and Tj =25°C

 ● Extremely enhanced avalanche capability 


3 Applications 

● Welding 

● UPS 

● Three-level Inverter


VCE Vcesat,Tj=25℃ Ic Tjmax Package
650V 1.8V 20A  175℃ TO-263-3L


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