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Hic es: Home » Products » IGBT » 600V-650V » 20A 650V Trenchstop Insulae Bipolar Transistor DGE20F65M2 TO-263

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20A 650V Trenchstop Insulae Bipolar Transistor DGE20F65M2 TO-263

Utens DongHai fossam proprietariam designat et technologiam FS provexit, 650V FS IGBT offert mutationes commutationes superiores, NIVIS asperitatem altam et facilem parallelam operationem
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20A 650V Trenchstop Insulae Bipolar Transistor


I Features 

Fossa proprietatis utens consilio DongHai et technologiae FS provectae, 650V FS IGBT praebet commutationes superiores, altam NIVIS asperitatem et facilem operationem parallelam.


2 Features

 FS Trench Technology, positivum temperamentum coefficientem

 Saturatio humilis intentione: VCE(sat), typ = 1.8V @ IC = 20A et Tj = 25°C

 valde auctus facultatem NIVIS CASUS 


III Applications 

Welding 

UPS 

Tres-gradu Inverter


VCE Vcesat,Tj=25℃ Ic Tjmax sarcina
650V 1.8V 20A  175 TO-263-3L


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