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G50T65DS
WXDH
TO-247S
650V
50A
50A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj =25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
VCE | Vcesat,Tj=25℃ | Ic | Tjmax | Package |
650V | 2.0V | 50A | 175℃ | TO-247S |
50A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj =25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
VCE | Vcesat,Tj=25℃ | Ic | Tjmax | Package |
650V | 2.0V | 50A | 175℃ | TO-247S |