Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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50A 650V Trenchstop Insulated Gate Bipolar Transistor G50T65DS TO-247S

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
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  • G50T65DS

  • WXDH

50A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj =25°C

● Extremely enhanced avalanche capability


3 Applications

● Welding 

● UPS

● Three-level Inverter

VCEVcesat,Tj=25℃IcTjmaxPackage
650V2.0V50A 175℃TO-247S


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