未命名 (I) (VIII) (I)
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50A 650V trenchstop insulatas portam bipolar Transistor G50T65ds ad-247s

Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt praebet superior et switching facienda, princeps NIVIS Avalanche Ruggedenfy Securus Parallela Operatio
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50A 650V trenchstop insulatas portam bipolar Transistor


I features 

● fs fossam technology, positivum temperatus coefficiens 

● humilis saturation intentione: VCE (Sat), Typ = 2.0v @ IC = 50A et TJ = XXV ° C

● maxime amplificata avalanche facultatem


III Applications

● Welding 

● UPS

● tres-gradu inverter


VCE Vcsat, TJ = XXV ℃ IC Tjmax Sarcina
650v 2.0v 50A  CLXXV ℃ Ad 247s


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