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50A 650V Trenchstop Insulae Bipolar Transistor G50T65DS TO-247S

Utens DongHai fossam proprietatis designat et technologiam FS promovet, 650V FS IGBT offert superiora et mutandi spectacula, alta NIVIS asperitas faciles parallelas operationes
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50A 650V Trenchstop Insulae Bipolar Transistor


I Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 2.0V @ IC = 50A et Tj = 25°C

valde auctus facultatem NIVIS CASUS


III Applications

Welding 

UPS

Tres-gradu Inverter


VCE Vcesat,Tj=25℃ Ic Tjmax sarcina
650V 2.0V 50A  175 TO-247S


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