Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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30A 650V Trenchstop Insulated Gate Bipolar Transistor DGF30F65M2 TO-220F

30A 650V Trenchstop Insulated Gate Bipolar Transistor
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Quantity:
  • DGF30F65M2

  • WXDH

30A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features 

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.9V @ IC =30A and Tj = 25°C

● Extremely enhanced avalanche capability


3 Applications

● Welding 

● UPS 

● Three-level Inverter


VcesPackageIc(Tj=100℃)
650VTO-220F30A 


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