 |
| Quantity: | |
|---|---|
DGF30F65M2
WXDH
TO-220F
650V
30A
30A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.9V @ IC =30A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| Vces | Package | Ic(Tj=100℃) |
| 650V | TO-220F | 30A |
30A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.9V @ IC =30A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| Vces | Package | Ic(Tj=100℃) |
| 650V | TO-220F | 30A |
