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30A 650V trenchstop insulatas portam Bipolar Transistor DGF30F65M2 ad-220F

Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt praebet superior et switching facienda, princeps NIVIS Avalanche Ruggedenfy Securus Parallela Operatio
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30A 650V trenchstop insulatas portam bipolar Transistor


I features 

Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v fs igbt offert superior et switching operas, princeps NIVIS Avalanche Ruggedenfo 


II features 

● fs fossam technology, positivum temperatus coefficiens

● humilis saturation intentione: VCE (Sat), Typ = 1.9v @ IC = 30A et TJ = XXV ° C

● maxime amplificata avalanche facultatem


III Applications

● Welding 

● UPS 

● tres-gradu inverter


Vces Sarcina IC (TJ = C ℃)
650v Ad-220f 30A 


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