Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » IGBT » 600V-650V » 20A 650V Trenchstop Insulated Gate Bipolar Transistor DGC20F65M2 TO-247-3L

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

20A 650V Trenchstop Insulated Gate Bipolar Transistor DGC20F65M2 TO-247-3L

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
Availability:
Quantity:
  • DGC20F65M2

  • WXDH

20A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Description 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =20A and Tj =25°C

● Extremely enhanced avalanche capability 


3 Applications 

● Welding 

● UPS 

● Three-level Inverter


VDSSVcesat,Tj=25℃ID
650V1.8V20A


Previous: 
Next: 

Product Category

Latest News

  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox