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Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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20A 650V Trenchstop Insulated Gate Bipolar Transistor DGC20F65M2 TO-247-3L

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
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20A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Description 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =20A and Tj =25°C

● Extremely enhanced avalanche capability 


3 Applications 

● Welding 

● UPS 

● Three-level Inverter


VDSS Vcesat,Tj=25℃ ID
650V 1.8V 20A


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