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Hic es: Home » Products » IGBT » 600V-650V » 20A 650V Trenchstop Insulae Portae Bipolar Transistor DGC20F65M2 TO-247-3L

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20A 650V Trenchstop Insulae Bipolar Transistor DGC20F65M2 TO-247-3L

Utens DongHai fossam proprietatis designans et technologiam FS promovens, 650V FS IGBT offert superiora et mutandi spectacula, alta NIVIS asperitas faciles parallelas operationes
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20A 650V Trenchstop Insulae Bipolar Transistor


1 Description 

Utens DongHai fossam proprietariam designat et FS technologiam promovet, 650V FS IGBT actiones meliores et commutationes praebet, altae NIVIS asperitas facilem operationem parallelam. 


2 Features

FS Trench Technology, caliditas positiva coefficientis 

● Saturatio humilis intentione: VCE(sat), typ = 1.8V @ IC = 20A et Tj = 25°C

valde auctus facultatem NIVIS CASUS 


III Applications 

Welding 

UPS 

Tres-gradu Inverter


VDSS Vcesat,Tj=25℃ ID
650V 1.8V 20A


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