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20A 650V trenchstop insulatas portam bipolar Transistor dgc20f65m2 ad-247-3l

Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt praebet superior et switching facienda, princeps NIVIS Avalanche Ruggedenfy Securus Parallela Operatio
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20A 650V trenchstop insulatas portam bipolar Transistor


I Description 

Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v fs igbt offert superior et switching operas, princeps NIVIS Avalanche Ruggedenfo 


II features

● fs fossam technology, positivum temperatus coefficiens 

● humilis saturation intentione: VCE (Sat), Typ = 1.8v @ IC = 20A et TJ = XXV ° C

● maxime amplificata avalanche facultatem 


III Applications 

● Welding 

● UPS 

● tres-gradu inverter


Vdss Vcsat, TJ = XXV ℃ Id
650v 1.8v 20A


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