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50A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Description
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
Type | Vce | Ic | Vcesat,Tj=25℃ | Tjmax | Package |
G50T65D | 650V | 50A | 2.0V | 175℃ | TO-3PN |
50A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Description
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
Type | Vce | Ic | Vcesat,Tj=25℃ | Tjmax | Package |
G50T65D | 650V | 50A | 2.0V | 175℃ | TO-3PN |