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G50T65LBBW

50A 650V Trenchstop Insulae Portae Bipolar Transistor
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50A 650V Trenchstop Insulae Bipolar Transistor

1 Description

Utens DongHai fossam proprietariam designet ac FS technologiam promovet, 650V FS IGBT superior et superior offert.

mutandi spectacula alta NIVIS asperitas faciles operationes parallelae

2 Features

FS Trench Technology, caliditas positiva coefficientis

● Saturatio humilis intentione: VCE(sat), typ = 2.0V @ IC = 50A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

III Applications

Welding

UPS

Tres-gradu Inverter

Type

Vce Ic Vcesat,Tj=25℃ Tjmax sarcina
G50T65D 650V 50A 2.0V 175 TO-3PN


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