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50A 650V trenchstop insulatas portam bipolar Transistor
I Description
Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v Higbt praebet superior
Switching operas, princeps NIVIS Avalanche Ruggedeness Securus Operatio
II features
● fs fossam technology, positivum temperatus coefficiens
● humilis saturation intentione: VCE (Sat), Typ = 2.0v @ IC = 50A et TJ = XXV ° C
● maxime amplificata avalanche facultatem
III Applications
● Welding
● UPS
● tres-gradu inverter
Genus | VCE | IC | Vcsat, TJ = XXV ℃ | Tjmax | Sarcina |
G50T65d | 650v | 50A | 2.0v | CLXXV ℃ | Ad-3pn |
50A 650V trenchstop insulatas portam bipolar Transistor
I Description
Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v Higbt praebet superior
Switching operas, princeps NIVIS Avalanche Ruggedeness Securus Operatio
II features
● fs fossam technology, positivum temperatus coefficiens
● humilis saturation intentione: VCE (Sat), Typ = 2.0v @ IC = 50A et TJ = XXV ° C
● maxime amplificata avalanche facultatem
III Applications
● Welding
● UPS
● tres-gradu inverter
Genus | VCE | IC | Vcsat, TJ = XXV ℃ | Tjmax | Sarcina |
G50T65d | 650v | 50A | 2.0v | CLXXV ℃ | Ad-3pn |