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6A 650V Trenchstop Insulated Gate Bipolar Transistor DGD06F65M2 TO-252B

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
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6A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.73V @ IC =6A and Tj = 25°C 

● Extremely enhanced avalanche capability 


3 Applications 

● Welding 

● UPS 

● Three-level

VCE Vcesat,Tj=25℃ Ic Tjmax Package
650V 1.73V 6A  150℃ TO-252B


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