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| Quantity: | |
|---|---|
DGD06F65M2
WXDH
TO-252B
650V
6A
6A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.73V @ IC =6A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level
| VCE | Vcesat,Tj=25℃ | Ic | Tjmax | Package |
| 650V | 1.73V | 6A | 150℃ | TO-252B |
6A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.73V @ IC =6A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level
| VCE | Vcesat,Tj=25℃ | Ic | Tjmax | Package |
| 650V | 1.73V | 6A | 150℃ | TO-252B |
