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Hic es: Home » Products » IGBT » 600V-650V » 6A 650V Trenchstop Insulae portae Bipolar Transistor DGD06F65M2 TO-252B

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6A 650V Trenchstop Insulae Bipolar Transistor DGD06F65M2 TO-252B

Utens DongHai fossam proprietatis designans et technologiam FS promovens, 650V FS IGBT offert superiora et mutandi spectacula, alta NIVIS asperitas faciles parallelas operationes
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6A 650V Trenchstop Insulae Bipolar Transistor


I Features 

Utens DongHai fossam proprietariam designat et FS technologiam promovet, 650V FS IGBT actiones meliores et commutationes praebet, altae NIVIS asperitas facilem operationem parallelam. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 1.73V @ IC = 6A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS 


III Applications 

Welding 

UPS 

Tres-gradu

VCE Vcesat,Tj=25℃ Ic Tjmax sarcina
650V 1.73V 6A  150℃ TO-252B


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