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6A 650V trenchstop insulatas portam bipolar Transistor dgd06f6f6f65m2 ad-252b

Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt praebet superior et switching facienda, princeps NIVIS Avalanche Ruggedenfy Securus Parallela Operatio
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6a 650V trenchstop insulatas portam bipolar Transistor


I features 

Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v fs igbt offert superior et switching operas, princeps NIVIS Avalanche Ruggedenfo 


II features 

● fs fossam technology, positivum temperatus coefficiens 

● humilis saturation intentione: VCE (Sat), typ = 1.73v @ IC = 6a et TJ = XXV ° C 

● maxime amplificata avalanche facultatem 


III Applications 

● Welding 

● UPS 

● Tres-Level

VCE Vcsat, TJ = XXV ℃ IC Tjmax Sarcina
650v 1.73v 6a  CL ℃ Ad-252b


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