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60A 650V Insulated Gate Bipolar Transistor G60T65D TO-3PN

Using DongHai's proprietary Planar design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
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60A 650V Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Planar design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. 


2 Features： 

 FS Trench Technology, Positive temperature coefficient 

 Low saturation voltage: VCE(sat), typ = 1.85V @ IC =60A and TC = 25°C 

 Extremely enhanced avalanche capability 


3 Applications： 

Aircondition

Welding

UPS

Vces Package Ic(Tj=100℃)
650V TO-3PN 60A 


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