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60A 650v insulatas portam Bipolar Transistor G60T65D ad-3pn

Using Donghai scriptor proprietary Planar Design et Advanced Fs technology, 650v High Offert superior conduction et switching operas, princeps NIVIS Ruggedeness et Securus parallel operatio.
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60A 650v insulatas portam bipolar Transistor


I features 

Using Donghai scriptor proprietary Planar Design et Advanced Fs technology, 650v High Offert superior conduction et switching operas, princeps NIVIS Ruggedeness et Securus parallel operatio. 


II features: 

 fs fossam technology, positivum temperatus coefficiens 

 Minimum Saturation intentione: VCE (Sat), Typ = 1.85V @ IC = 60a et TC = XXV ° 

 maxime amplificata avalanche facultatem 


III Applications: 

Aircondium

LIBELLUS

Ups

Vces Sarcina IC (TJ = C ℃)
650v Ad-3pn 60a 


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