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40A 1200V Half bridge module IGBTModule DGA40H120M2T 34mm

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
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40A 1200V Half bridge module

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 2.25V @ IC =100A and Tj = 25°C 

● Extremely enhanced avalanche capability 


3 Applications

 Welding 

 UPS 

 Three-leve Inverter 

 AC and DC servo drive amplifier


Type VCE Ic VCEsat,Tj=25℃ Tjop Package
DGA40H120M2T 1200V 40A (Tj=100℃) 1.75V (Typ) 150℃ 34MM


download DGA100H170M2T-REV1.0.pdf

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