Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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Trenchstop Insulated Gate Bipolar Transistor 6A 650V DGD06F65M2 TO-252B

Trenchstop Insulated Gate Bipolar Transistor 6A 650V
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  • DGD06F65M2

  • WXDH

Trenchstop Insulated Gate Bipolar Transistor 6A 650V


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.73V @ IC =6A and Tj = 25°C

● Extremely enhanced avalanche capability


3 Applications 

● Welding 

● UPS

● Three-level Inverter


VCEVcesat,Tj=25℃IcTjmaxPackage
650V1.73V6A 150℃TO-252B


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