Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DGC75F65M TO-247

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
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  • DGC75F65M

  • WXDH

75A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =75A and Tj = 25°C

● Extremely enhanced avalanche capability 


3 Applications 

● Welding 

● UPS 

● Three-level Inverter

VCEVcesat,Tj=25℃IcTjmaxPackage
650V1.7V75A 175℃TO-247-3L


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